PMGD8000LN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual UTrenchMOS logic level FET

PMGD8000LN
Dual µTrenchMOS™ logic level FET
Rev. 01 — 27 February 2003
MBD128
Product data
1. Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMGD8000LN in SOT363 (SC-88).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High-speed switch
s Low power DC-to-DC converter.
4. Pinning information
Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol
Pin
Description
Simplified outline
1
source (s1)
2
gate (g1)
6 54
3
drain (d2)
4
source (s2)
5
gate (g2)
6
drain (d1)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d1
d2
s1 g1 s2 g2
MSD901