PMGD290UCEA_15 Datasheet, PDF (1/21 Pages) NXP Semiconductors – 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET

PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very
small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• 2 kV ESD protection
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
• Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
TR1 (N-channel), Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 500 mA; T_j = 25 °C
resistance
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -400 mA; T_j = 25 °C
resistance
TR1 (N-channel)
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
TR2 (P-channel)
V_DS
drain-source voltage T_j = 25 °C
Min Typ Max Unit
-
290 380 mΩ
-
670 850 mΩ
-
-
-8
-
-
-
-
-
20
V
8
V
725 mA
-20 V
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