PMGD280UN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual N-channel mTrenchMOS ultra low level FET

PMGD280UN
Dual N-channel µTrenchMOS™ ultra low level FET
Rev. 01 — 10 February 2004
MBD128
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Surface mounted package
s Dual device
s Low on-state resistance
s Footprint 40% smaller than SOT23
s Fast switching
s Low threshold voltage.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s V_DS ≤ 20 V
s P_tot ≤ 0.41 W
s I_D ≤ 0.87 A
s R_DSon ≤ 340 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
Simplified outline
source (s1)
gate (g1)
6 54
drain (d2)
source (s2)
gate (g2)
drain (d1)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d1
d2
s1 g1 s2 g2
MSD901