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PMG370XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET | |||
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PMG370XN
N-channel µTrenchMOS⢠extremely low level FET
Rev. 01 â 13 February 2004
MBD128
Product data
1. Product proï¬le
1.1 Description
N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOS⢠technology.
1.2 Features
s Surface mounted package
s Low on-state resistance
s Footprint 40% smaller than SOT23
s Low threshold voltage.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s VDS ⤠30 V
s Ptot ⤠0.69 W
s ID ⤠0.96 A
s RDSon ⤠440 mâ¦.
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simpliï¬ed outline and symbol
Description
Simpliï¬ed outline
drain (d)
drain (d)
6 54
gate (g)
source (s)
drain (d)
drain (d)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d
g
MBB076
s
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