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PMFPB8032XP_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination | |||
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PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky
combination
21 December 2012
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠1.8 V RDSon rated for low-voltage gate drive
⢠Small and leadless ultra thin SMD plastic package: 2 à 2 à 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Integrated ultra low VF MEGA Schottky diode
3. Applications
⢠Charging switch for portable devices
⢠DC-to-DC converters
⢠Power management in battery-driven portables
⢠Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
MOSFET transistor
VDS
drain-source voltage Tj = 25 °C
-
-
-20 V
VGS
gate-source voltage
-12 -
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
[1]
-
-
-3.7 A
Schottky diode
IF
forward current
Tsp ⤠105 °C
-
-
2
A
VR
reverse voltage
Tamb = 25 °C
-
-
20
V
MOSFET transistor static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
resistance
-
80
102 mΩ
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