PMF370XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel mTrenchMOS extremely low level FET

PMF370XN
N-channel µTrenchMOS™ extremely low level FET
Rev. 01 — 11 February 2004
M3D102
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Surface mounted package
s Low on-state resistance
s Footprint 40% smaller than SOT23
s Low threshold voltage.
1.3 Applications
s Driver circuits
s Switching in portable appliances.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 0.56 W
s I_D ≤ 0.87 A
s R_DSon ≤ 440 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT323 (SC-70), simplified outline and symbol
Description
Simplified outline
gate (g)
3
source (s)
drain (d)
1
2
Top view
MBC870
SOT323 (SC-70)
Symbol
d
g
MBB076
s