PMEG6020EP Datasheet, PDF (1/14 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier

PMEG6020EP
2 A low V_F MEGA Schottky barrier rectifier
Rev. 01 — 17 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 Average forward current: I_F(AV)  2 A
 Reverse voltage: V_R  60 V
 Low forward voltage
 High power capability due to clip-bond technology
 AEC-Q101 qualified
 Small and flat lead SMD plastic package
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
I_F(AV)
average forward current
square wave;
 = 0.5;
f = 20 kHz
T_amb  85 C
[1] _-
-
2
T_sp  140 C
-
-
2
V_R
reverse voltage
-
-
60
V_F
forward voltage
I_F = 2 A
-
460 530
I_R
reverse current
V_R = 60 V
-
60
150
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
A