PMEG6020AELR_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 2 A low leakage current Schottky barrier rectifier

PMEG6020AELR
60 V, 2 A low leakage current Schottky barrier rectifier
19 June 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Extremely low leakage current I_R = 235 nA
• Average forward current: I_F(AV) ≤ 2 A
• Reverse voltage: V_R ≤ 60 V
• Low forward voltage V_F = 600 mV
• High power capability due to clip-bonding technology
• High temperature T_j ≤ 175 °C
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_sp ≤ 165 °C;
square wave
T_j = 25 °C
I_F = 2 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 60 V; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
Min Typ Max Unit
-
-
2
A
-
-
60
V
-
600 670 mV
-
235 700 nA
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