PMEG6020AELP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 2 A low leakage current Schottky barrier rectifier

PMEG6020AELP
60 V, 2 A low leakage current Schottky barrier rectifier
8 May 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Extremely low leakage current I_R = 235 nA
• Average forward current: I_F(AV) ≤ 2 A
• Reverse voltage: V_R ≤ 60 V
• Low forward voltage V_F = 600 mV
• High power capability due to clip-bonding technology
• High temperature T_j ≤ 175 °C
• Small and flat lead SMD plastic package
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_sp ≤ 165 °C;
square wave
T_j = 25 °C
I_F = 2 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 60 V; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
Min Typ Max Unit
-
-
2
A
-
-
60
V
-
600 670 mV
-
235 700 nA
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