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PMEG6010ELR_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V, 1 A low leakage current Schottky barrier rectifier | |||
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PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier
3 June 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠Average forward current: IF(AV) ⤠1 A
⢠Reverse voltage: VR ⤠60 V
⢠Extremely low leakage current
⢠Low forward voltage
⢠High power capability due to clip-bonding technology
⢠Small and flat lead SMD plastic package
⢠AEC-Q101 qualified
⢠High temperature Tj ⤠175 °C
3. Applications
⢠Low voltage rectification
⢠High efficiency DC-to-DC conversion
⢠Switch mode power supply
⢠Reverse polarity protection
⢠Low power consumption applications
4. Quick reference data
Table 1.
Symbol
IF(AV)
VF
IR
Quick reference data
Parameter
average forward
current
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ⤠170 °C;
square wave
IF = 1 A; Tj = 25 °C
VR = 60 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
Min Typ Max Unit
-
-
1
A
-
605 660 mV
-
90
300 nA
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