 English |
|
|
|
|
|
|
|
| PMEG3050BEP Datasheet, PDF (1/13 Pages) NXP Semiconductors – Planar MEGA Schottky barrier rectifier with an integrated guard ring for stress protection | |||
| |||
|
PMEG3050BEP
5 A low VF MEGA Schottky barrier rectiï¬er
Rev. 01 â 28 October 2009
Product data sheet
1. Product proï¬le
1.1 General description
Planar Maximum Efï¬ciency General Application (MEGA) Schottky barrier rectiï¬er with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and ï¬at lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ⤠5 A
I Reverse voltage: VR ⤠30 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualiï¬ed
I Small and ï¬at lead SMD plastic package
1.3 Applications
I Low voltage rectiï¬cation
I High efï¬ciency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
IF(AV)
average forward current
VR
reverse voltage
VF
forward voltage
IR
reverse current
Conditions
square wave;
δ = 0.5;
f = 20 kHz;
Tsp ⤠135 °C
IF = 5 A
VR = 30 V
Min Typ Max Unit
-
-
5
A
-
-
30
V
-
400 450 mV
-
90
250 µA
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese