PMEG3020EPA_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier

PMEG3020EPA
2 A low V_F MEGA Schottky barrier rectifier
Rev. 01 — 15 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin
SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability.
1.2 Features
„ Average forward current: I_F(AV) ≤ 2 A
„ Reverse voltage: V_R ≤ 30 V
„ Low forward voltage
„ Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
„ AEC-Q101 qualified
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
„ Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
T_amb ≤ 65 °C
T_sp ≤ 140 °C
[1] _-
-
-
I_F = 2 A
-
V_R = 30 V
-
-
2
-
2
-
30
410 470
435 2500
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA