PMEG3020EPAS_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 2 A low VF MEGA Schottky barrier rectifier

PMEG3020EPAS
30 V, 2 A low VF MEGA Schottky barrier rectifier
19 January 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3
(SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
2. Features and benefits
• Average forward current I_F(AV) ≤ 2 A
• Reverse voltage V_R ≤ 30 V
• Low forward voltage V_F ≤ 470 mV
• Low reverse current
• Reduced Printed-Circuit-Board (PCB) area requirements
• Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with visible and solderable side pads
• Suitable for Automatic Optical Inspection (AOI) of solder joints
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch Mode Power Supply (SMPS)
• Free-wheeling application
• Reverse polarity protection
• Low power consumption application
• Battery chargers for mobile equipment
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
Conditions
δ = 0.5; f = 20 kHz; T_amb ≤ 65 °C;
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 140 °C;
square wave
T_j = 25 °C
Min Typ Max Unit
[1]
-
-
2
A
-
-
2
A
-
-
30
V
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