PMEG3020CPAS_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 2 A low VF dual MEGA Schottky barrier rectifier

PMEG3020CPAS
30 V, 2 A low VF dual MEGA Schottky barrier rectifier
20 January 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
• Average forward current I_F(AV) ≤ 2 A
• Reverse voltage V_R ≤ 30 V
• Low forward voltage V_F ≤ 440 mV
• Low reverse current
• Reduced Printed-Circuit-Board (PCB) area requirements
• Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with visible and solderable side pads
• Suitable for Automatic Optical Inspection (AOI) of solder joints
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch Mode Power Supply (SMPS)
• Free-wheeling application
• Reverse polarity protection
• Low power consumption application
• Battery chargers for mobile equipment
• LED backlight for mobile application
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
I_F(AV)
average forward
current
Conditions
δ = 0.5; f = 20 kHz; T_amb ≤ 75 °C;
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 135 °C;
square wave
Min Typ Max Unit
[1]
-
-
2
A
-
-
2
A
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