PMEG3010EB_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
Rev. 2 — 15 March 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 Forward current: I_F ≤ 1 A
 Reverse voltage: V_R ≤ 30 V
 Very low forward voltage
 AEC-Q101 qualified
 Ultra small and flat lead SMD plastic
package
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch mode power supply
 Reverse polarity protection
 Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I_F
V_R
V_F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
T_sp ≤ 55 °C
I_F = 1 A; pulsed; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_amb = 25 °C
2. Pinning information
Min Typ Max Unit
-
-
1
A
-
-
30 V
-
610 680 mV
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
cathode^[1]
A
anode
[1] The marking bar indicates the cathode.
Simplified outline
1
2
SOD523
Graphic symbol
1
2
sym001