PMEG3010AESB_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
18 June 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 30 V
• Low forward voltage, typical: V_F = 415 mV
• Low reverse current, typical: I_R = 300 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_sp ≤ 145 °C;
square wave
T_j = 25 °C
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C
V_R = 20 V; t_p ≤ 3 ms; δ ≤ 0.3 ;
T_j = 25 °C
V_R = 30 V; t_p ≤ 3 ms; δ ≤ 0.3 ;
T_j = 25 °C
Min Typ Max Unit
-
-
1
A
-
-
30
V
-
415 480 mV
-
60
255 µA
-
300 1250 µA
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