PMEG3010AESA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG3010AESA
30 V, 1 A low VF MEGA Schottky barrier rectifier
3 August 2015
Preliminary data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2
(SOD995) Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 30 V
• Low forward voltage, typical: V_F = 415 mV
• Low reverse current, typical: I_R = 300 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_sp ≤ 145 °C;
square wave
T_j = 25 °C
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 20 V; t_p ≤ 3 ms; δ ≤ 0.3; T_j = 25 °C
V_R = 30 V; t_p ≤ 3 ms; δ ≤ 0.3; T_j = 25 °C
Min Typ Max Unit
-
-
1
A
-
-
30
V
-
415 480 mV
-
60
255 µA
-
300 1250 µA
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