PMEG3002AESF_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG3002AESF
30 V, 0.2 A low VF MEGA Schottky barrier rectifier
13 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
• Average forward current I_F(AV) ≤ 0.2 A
• Reverse voltage V_R ≤ 30 V
• Low forward voltage typ. V_F = 250 mV
• Low reverse current typ. I_R = 4 µA
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Ultra high speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
I_R
t_rr
Quick reference data
Parameter
Conditions
average forward
current
δ = 0.5; f = 20 kHz; T_amb ≤ 140 °C;
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 147 °C;
square wave
reverse voltage
T_j = 25 °C
forward voltage
I_F = 10 mA; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
reverse current
V_R = 10 V; T_j = 25 °C; pulsed
reverse recovery time I_F = 500 mA; I_R = 500 mA;
I_R(meas) = 100 mA; T_j = 25 °C
Min Typ Max Unit
[1]
-
-
0.2 A
-
-
0.2 A
-
-
30
V
-
250 320 mV
-
4
30
µA
-
1.37 -
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
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