PMEG2020EPA_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 2 A low VF MEGA Schottky barrier rectifier

PMEG2020EPA
2 A low V_F MEGA Schottky barrier rectifier
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1061 leadless small
Surface-Mounted Device (SMD) plastic package.
1.2 Features
„ Average forward current: I_F(AV) ≤ 2 A
„ Reverse voltage: V_R ≤ 20 V
„ Low forward voltage
„ Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
„ AEC-Q101 qualified
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
„ Battery chargers for mobile equipment
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
T_amb ≤ 80 °C
T_sp ≤ 140 °C
[1] _-
-
-
I_F = 2 A
-
V_R = 20 V
-
-
2
-
2
-
20
385 420
335 1900
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA