PMEG2010EPK Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG2010EPK
20 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 20 January 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a leadless ultra small
SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderable
side pads.
1.2 Features and benefits
 Average forward current: I_F(AV) ≤ 1 A
 Reverse voltage: V_R ≤ 20 V
 Low forward voltage V_F ≤ 415 mV
 Low reverse current
 AEC-Q101 qualified
 Solderable side pads
 Package height typ. 0.37 mm
 Ultra small and leadless SMD plastic
package
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch mode power supply
 LED backlight for mobile application
 Low power consumption applications
 Ultra high-speed switching
 Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
square wave; δ = 0.5; f = 20 kHz;
[1]
T_amb ≤ 110 °C
square wave; δ = 0.5; f = 20 kHz;
T_sp ≤ 135 °C
T_j = 25 °C
I_F = 1 A; pulsed; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 10 V; T_j = 25 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Min Typ Max Unit
-
-
1
A
-
-
1
A
-
-
20 V
-
370 415 mV
-
50
250 µA