PMEG2010BELD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG2010BELD
20 V, 1 A low VF MEGA Schottky barrier rectifier
4 August 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection, encapsulated in a leadless ultra small
DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
2. Features and benefits
• Average forward current: I_F(AV) ≤ 1 A
• Reverse voltage: V_R ≤ 20 V
• Low forward voltage V_F ≤ 490 mV
• AEC-Q101 qualified
• Ultra small and leadless SMD plastic package
• Solderable side pads
• Package height typ. 0.37 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Reverse polarity protection
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_sp ≤ 130 °C;
square wave
δ = 0.5 ; f = 20 kHz; T_amb ≤ 80 °C;
[1]
square wave
T_j = 25 °C
I_F = 1 A; pulsed; t_p ≤ 300 µs; δ ≤ 0.02 ;
T_j = 25 °C
V_R = 10 V; T_j = 25 °C
Min Typ Max Unit
-
-
1
A
-
-
1
A
-
-
20
V
-
428 490 mV
-
28
50
µA
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