PMEG2010AEH Datasheet, PDF (1/8 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifiers

PMEG2010AEH
20 V, 1 A very low V_F MEGA Schottky barrier rectifier in
SOD123F package
Rev. 02 — 26 May 2005
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection encapsulated in a SOD123F small SMD plastic
package.
1.2 Features
s Forward current: 1 A
s Reverse voltage: 20 V
s Very low forward voltage
s Small and flat lead SMD package
1.3 Applications
s Low voltage rectification
s High efficiency DC-to-DC conversion
s Switch mode power supply
s Inverse polarity protection
s Low power consumption applications
1.4 Quick reference data
Table 1:
Symbol
I_F
V_R
V_F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
T_sp ≤ 55 °C
I_F = 1 A
Min Typ Max Unit
-
-
1
A
-
-
20 V
[1] _-
380 430 mV