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PMEG2005ELD_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 0.5 A low VF MEGA Schottky barrier rectifier | |||
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PMEG2005ELD
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
Rev. 1 â 4 May 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra
small Surface-Mounted Device (SMD) plastic package with visible and solderable side
pads.
1.2 Features and benefits
 Forward current: IF ⤠0.5 A
 Reverse voltage: VR ⤠20 V
 Low forward voltage: VF ⤠500 mV
 Low reverse current
 AEC-Q101 qualified
 Solderable side pads
 Package height typ. 0.37 mm
 Ultra small and leadless SMD plastic
package
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch Mode Power Supply (SMPS)
 Reverse polarity protection
 Low power consumption applications
 Ultra high-speed switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
IF(AV)
IR
VR
VF
average forward
current
reverse current
reverse voltage
forward voltage
square wave; δ = 0.5; f = 20 kHz
Tamb ⤠85 °C
[1] -
Tsp ⤠130 °C
-
VR = 10 V
-
-
IF = 500 mA
[2] -
-
0.5 A
-
0.5 A
5
30 μA
-
20 V
450 500 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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