PMEG2002ESF_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
8 October 2013
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current I_F(AV) ≤ 0.2 A
• Reverse voltage V_R ≤ 20 V
• Low forward voltage typ. V_F 310 mV
• Low reverse current typ. I_R 0.88 µA
• Ultra small and leadless SMD package
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_sp ≤ 125 °C;
square wave
δ = 0.5 ; f = 20 kHz; T_amb ≤ 115 °C;
square wave
T_j = 25 °C
I_F = 10 mA; pulsed; t_p ≤ 300 µs;
δ ≤ 0.02 ; T_j = 25 °C
V_R = 10 V; T_j = 25 °C
Min Typ Max Unit
-
-
0.2 A
[1]
-
-
0.2 A
-
-
20
V
-
310 380 mV
-
0.37 -
µA
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
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