PMEG2002AESF_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 0.2 A low VF MEGA Schottky barrier rectifier

PMEG2002AESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
22 January 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current I_F(AV) ≤ 0.2 A
• Reverse voltage V_R ≤ 20 V
• Low forward voltage typ. V_F = 245 mV
• Low reverse current typ. I_R = 5 µA
• Ultra small and leadless SMD package
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T_amb = 115 °C;
square wave
δ = 0.5 ; f = 20 kHz; T_sp = 125 °C;
square wave
T_j = 25 °C
I_F = 10 mA; pulsed; t_p ≤ 300 µs;
δ ≤ 0.02 ; T_j = 25 °C
V_R = 10 V; T_j = 25 °C
Min Typ Max Unit
[1]
-
-
0.2 A
-
-
0.2 A
-
-
20
V
-
245 310 mV
-
5
-
µA
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
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