PMEG1030EH_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – 10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers

PMEG1030EH; PMEG1030EJ
10 V, 3 A ultra low V_F MEGA Schottky barrier rectifiers
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small SMD plastic packages.
Table 1. Product overview
Type number
Package
NXP
PMEG1030EH
SOD123F
PMEG1030EJ
SOD323F
JEITA
-
SC-90
Configuration
single isolated diodes
single isolated diodes
1.2 Features
„ Forward current: 3 A
„ Reverse voltage: 10 V
„ Ultra low forward voltage
„ Small and flat lead SMD package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switched-mode power supply
„ Inverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I_F
V_R
V_F
Quick reference data
Parameter
Conditions
forward current
T_sp ≤ 55 °C
reverse voltage
forward voltage
I_F = 3 A
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min
Typ
Max Unit
-
-
3
A
-
-
10
V
[1] _-
390
530
mV