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PMEG10030ELP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 3 A low leakage current Schottky barrier rectifier | |||
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PMEG10030ELP
100 V, 3 A low leakage current Schottky barrier rectifier
7 May 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠Extremely low leakage current IR = 110 nA
⢠Reverse voltage: VR ⤠100 V
⢠Average forward current: IF(AV) ⤠3 A
⢠High power capability due to clip-bonding technology
⢠High temperature Tj ⤠175 °C
⢠Small and flat lead SMD plastic package
⢠AEC-Q101 qualified
3. Applications
⢠Low voltage rectification
⢠High efficiency DC-to-DC conversion
⢠Switch mode power supply
⢠Reverse polarity protection
⢠Low power consumption applications
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR
reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ⤠160 °C;
square wave
Tj = 25 °C
IF = 3 A; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
VR = 100 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C
Min Typ Max Unit
-
-
3
A
-
-
100 V
-
710 770 mV
-
110 450 nA
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