PMDXB950UPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, dual P-channel Trench MOSFET

PMDXB950UPE
20 V, dual P-channel Trench MOSFET
30 June 2015
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection > 1 kV HBM
• Drain-source on-state resistance R_DSon = 1.02 Ω
3. Applications
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -500 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
-20 V
8
V
-500 mA
-
1.02 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
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