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PMDXB600UNE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET | |||
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
1 July 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
⢠Trench MOSFET technology
⢠Leadless ultra small and ultra thin SMD plastic package: 1.1 à 1.0 à 0.37 mm
⢠Exposed drain pad for excellent thermal conduction
⢠ElectroStatic Discharge (ESD) protection > 1 kV HBM
⢠Drain-source on-state resistance RDSon = 470 mâ¦
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side load switch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
20
V
8
V
600 mA
-
470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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