PMDXB550UNE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, dual N-channel Trench MOSFET

PMDXB550UNE
30 V, dual N-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Exposed drain pad for excellent thermal conduction
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 590 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
30
V
8
V
590 mA
-
550 670 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
Scan or click this QR code to view the latest information for this product