PMDXB1200UPE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, dual P-channel Trench MOSFET

PMDXB1200UPE
30 V, dual P-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Low threshold voltage
• Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C
[1]
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -410 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
-30 V
8
V
-410 mA
-
1.2 1.4 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
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