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PMDT290UNE Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 800 mA dual N-channel Trench MOSFET | |||
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PMDT290UNE
20 V, 800 mA dual N-channel Trench MOSFET
Rev. 1 â 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
ï® Very fast switching
ï® Trench MOSFET technology
ï® ESD protection up to 2 kV
ï® AEC-Q101 qualified
1.3 Applications
ï® Relay driver
ï® High-speed line driver
ï® Low-side loadswitch
ï® Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
resistance
Min Typ Max Unit
-
-
-8
-
-
-
20 V
8
V
800 mA
-
290 380 mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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