PMDPB80XP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, dual P-channel Trench MOSFET

PMDPB80XP
20 V, dual P-channel Trench MOSFET
Rev. 1 — 30 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 1.8 V R_DSon rated for low voltage
gate drive
 Trench MOSFET technology
 Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
 Exposed drain pad for excellent
thermal conduction
1.3 Applications
 Charging switch for portable devices
 DC/DC converters
 Small brushless DC motor drive
 Power management in battery-driven
portables
 Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-12 -
12 V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-3.7 A
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -2.7 A; T_j = 25 °C
resistance
-
80
102 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².