PMDPB70XPE Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V dual P-channel Trench MOSFET

PMDPB70XPE
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
 Relay driver
 High-speed line driver
 High-side load switch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics (per transistor)
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -2 A; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-12 -
[1]
-
-
-20 V
12 V
-4.2 A
-
66
79
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².