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PMDPB55XP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, dual P-channel Trench MOSFET | |||
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PMDPB55XP
20 V, dual P-channel Trench MOSFET
Rev. 3 â 4 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
ï® Very fast switching
ï® Trench MOSFET technology
ï® Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
ï® Exposed drain pad for excellent
thermal conduction
1.3 Applications
ï® Charging switch for portable devices
ï® DC/DC converters
ï® Small brushless DC motor drive
ï® Power management in battery-driven
portables
ï® Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS
drain-source voltage Tj = 25 °C
-
-
-20 V
VGS
gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
[1]
-
-
-4.5 A
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
resistance
-
55
70
mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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