PMDPB30XN_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET

PMDPB30XN
20 V, dual N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Very fast switching
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Small brushless DC motor drive
• Power management in battery-driven portables
• Hard disc and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 3 A; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
-12 -
[1]
-
-
20
V
12
V
5.3 A
-
32
40
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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