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PMC85XP_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V P-channel MOSFET with pre-biased NPN transistor | |||
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PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
15 May 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET
technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
⢠Trench MOSFET technology
⢠NPN transistor built-in bias resistors
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
3. Applications
⢠Charging switch for portable devices
⢠High-side load switch
⢠USB port overvoltage protection
⢠Power management in battery-driven portables
⢠Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
P-channel Trench MOSFET
VDS
drain-source voltage Tj = 25 °C
-
-
-30 V
VGS
gate-source voltage
-12 -
12
V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ⤠5 s
[1]
-
-
-3.4 A
P-channel Trench MOSFET; static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C
resistance
-
85
110 mΩ
NPN RET
VCEO
collector-emitter
voltage
Tamb = 25 °C; open base
-
-
50
V
IO
output current
-
-
100 mA
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