PMBTA45_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

PMBTA45
500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor
Rev. 02 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low V_CEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9050T.
1.2 Features and benefits
„ High voltage
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ AEC-Q101 qualified
1.3 Applications
„ Electronic ballasts
„ LED driver for LED chain module
„ LCD backlighting
„ Automotive motor management
„ Flyback converters
„ Hook switch for wired telecom
„ Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
V_CESM
V_CEO
I_C
h_FE
Quick reference data
Parameter
collector-emitter peak
voltage
collector-emitter voltage
collector current
DC current gain
Conditions
V_BE = 0 V
open base
V_CE = 10 V; I_C = 30 mA
Min Typ Max Unit
-
-
500 V
-
-
500 V
-
-
0.15 A
50 100 -