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PMBTA44_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
PMBTA44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low current (max. 300 mA)
I High voltage (max. 400 V)
I AEC-Q101 qualified
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch mode power supply
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
DC current gain
VCE = 10 V; IC = 10 mA
Min Typ Max Unit
-
-
400 V
-
-
300 mA
50 -
200