PMBFJ620 Datasheet, PDF (1/13 Pages) NXP Semiconductors – Dual N-channel field-effect transistor

PMBFJ620
Dual N-channel field-effect transistor
Rev. 01 — 11 May 2004
Product data sheet
1. Product profile
CAUTION
1.1 General description
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two field effect transistors in a single package
s Low noise
s Interchangeability of drain and source connections
s High gain.
1.3 Applications
s AM input stage in car radios
s VHF amplifiers
s Oscillators and mixers.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Per FET
V_DS
V_GSoff
drain-source voltage
gate-source cut-off V_DS = 10 V; I_D = 1 µA
voltage
I_DSS
drain current
P_tot
total power
dissipation
V_GS = 0 V; V_DS = 10 V
T_s ≤ 90 °C
y_fs
forward transfer
admittance
V_DS = 10 V;
I_D = 10 mA
Min Typ Max Unit
-
-
−2
-
24
-
-
-
10
-
±25 V
−6.5 V
60
mA
190 mW
-
mS