PHP6NA60E Datasheet, PDF (1/4 Pages) NXP Semiconductors – PowerMOS transistors Low capacitance Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Low capacitance
Avalanche energy rated
Preliminary specification
PHP6NA60E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Low feedback capacitance
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
d
g
s
QUICK REFERENCE DATA
V_DSS = 600 V
I_D = 6.5 A
R_DS(ON) ≤ 1.2 Ω
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect power transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHP6NA60E is supplied in the
SOT78 (TO220AB) conventional
leaded package.
PINNING
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
SOT78 (TO220AB)
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
± 30
6.5
4.3
26
125
150
UNIT
V
V
V
A
A
A
W
˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche Unclamped inductive load, I_D = 6.5 A;
energy
V_DD ≤ 50 V; starting T_j = 25˚C; R_GS = 50 Ω;
Repetitive avalanche energy^{1 VGS = 10 V}
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
570
9.5
6.5
UNIT
mJ
mJ
A
1 pulse width and repetition rate limited by T_j max.
January 1998
1
Rev 1.000