PHP30NQ15T Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP30NQ15T, PHB30NQ15T
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
V_DSS = 150 V
I_D = 29 A
R_DS(ON) ≤ 63 mΩ
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP30NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB30NQ15T is supplied in the SOT404 (D²PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D²PAK)
PIN
DESCRIPTION
tab
tab
1 gate
2 drain¹
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
T_j = 25 ˚C to 175˚C
T_j = 25 ˚C to 175˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
150
150
± 20
29
20
116
150
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.000