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PHP18NQ20T Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PHP18NQ20T, PHB18NQ20T
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 16 A
RDS(ON) ≤ 180 mΩ
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHP18NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB18NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN
DESCRIPTION
tab
tab
1 gate
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
16
11
64
136
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.000