PHP18N20E Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
PHP18N20E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DS
I_D
P_tot
R_DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
200
18
150
0.18
UNIT
V
A
W
Ω
PINNING - TO220AB
PIN
DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
I_D
Continuous drain current
I_DM
P_D
∆P_D/∆T_mb
V_GS
E_AS
I_AS
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
T_j, T_stg
Operating junction and
storage temperature range
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
T_mb > 25 ˚C
V_DD ≤ 50 V; starting T_j = 25˚C; R_GS = 50 Ω;
V_GS = 10 V
V_DD ≤ 50 V; starting T_j = 25˚C; R_GS = 50 Ω;
V_GS = 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
18
12.5
72
150
1.0
± 30
150
18
175
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP. MAX. UNIT
-
1 K/W
60
- K/W
March 1997
1
Rev 1.000