PHM25NQ10T Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHM25NQ10T
TrenchMOS™ standard level FET
Rev. 03 — 11 September 2003
M3D879
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s SOT96 (SO-8) footprint compatible
s Surface mounted package
s Low thermal resistance
s Low profile.
1.3 Applications
s DC-to-DC primary side
s Portable equipment applications.
1.4 Quick reference data
s V_DS ≤ 100 V
s P_tot ≤ 62.5 W
s I_D ≤ 30.7 A
s R_DSon ≤ 30 mΩ.
2. Pinning information
Table 1: Pinning - SOT685-1 (QLPAK), simplified outline and symbol
Pin
1,2,3
4
Description
source (s)
gate (g)
Simplified outline
[1]
1
4
5,6,7,8 drain (d)
mb
mounting base,
mb
connected to drain (d)
8
Bottom view
5
MBL585
SOT685-1 (QLPAK)
[1] Shaded area indicates terminal 1 index area.
Symbol
d
g
MBB076
s