PHM18NQ15T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHM18NQ15T
TrenchMOS™ standard level FET
Rev. 02 — 20 August 2004
M3D879
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s SOT96 (SO-8) footprint compatible
s Surface mounted package
s Low thermal resistance
s Low profile.
1.3 Applications
s DC-to-DC converter primary side
switch
s Portable equipment applications.
1.4 Quick reference data
s V_DS ≤ 150 V
s P_tot ≤ 62.5 W
s I_D ≤ 19 A
s R_DSon ≤ 75 mΩ.
2. Pinning information
Table 1: Pinning - SOT685-1 (QLPAK), simplified outline and symbol
Pin
Description
Simplified outline
1,2,3
4
source (s)
gate (g)
1
4
5,6,7,8
mb
drain (d)
mounting base;
connected to drain (d)
mb
8
Bottom view
5
MBL585
SOT685-1 (QLPAK)
[1] Shaded area indicates pin 1 identifier.
Symbol
d
g
mbb076 s