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PHM15NQ20T Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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PHM15NQ20T
TrenchMOS⢠standard level FET
Rev. 03 â 11 September 2003
M3D879
Product data
1. Product proï¬le
1.1 Description
N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOS⢠technology.
1.2 Features
s SOT96 (SO-8) footprint compatible
s Surface mounted package
s Low thermal resistance
s Low proï¬le.
1.3 Applications
s DC-to-DC primary side
s Portable appliances.
1.4 Quick reference data
s VDS ⤠200 V
s Ptot ⤠62.5 W
s ID ⤠17.5 A
s RDSon ⤠80 mâ¦.
2. Pinning information
Table 1: Pinning - SOT685-1 (QLPAK), simpliï¬ed outline and symbol
Pin
1,2,3
4
Description
source (s)
gate (g)
Simpliï¬ed outline
[1]
1
4
5,6,7,8 drain (d)
mb
mounting base,
mb
connected to drain (d)
8
Bottom view
5
MBL585
SOT685-1 (QLPAK)
[1] Shaded area indicates pin 1 identiï¬er.
Symbol
d
g
MBB076
s
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