PHM12NQ20T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

PHM12NQ20T
TrenchMOS™ standard level FET
Rev. 01 — 30 January 2003
Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHM12NQ20T in SOT685-1 (QLPAK).
1.2 Features
s SOT96 (SO-8) footprint compatible
s Surface mount package
s Low thermal resistance
s Low profile.
1.3 Applications
s DC-DC converter primary side switch s Portable equipment applications.
1.4 Quick reference data
s V_DS ≤ 200 V
s P_tot ≤ 62.5 W
s I_D ≤ 14.4 A
s R_DSon ≤ 130 mΩ.
2. Pinning information
Table 1: Pinning - SOT685 (QLPAK), simplified outlines and symbol
Pin
Description
Simplified outline
1,2,3
4
source (s)
gate (g)
1
4
5,6,7,8
mb
drain (d)
mounting base,
connected to drain (d)
mb
8
Bottom view
5
MBL585
SOT685-1 (QLPAK)
[1] Shaded area indicates pin 1 identifier
Symbol
d
g
MBB076
s