PHKD6N02LT Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual TrenchMOS logic level FET

PHKD6N02LT
Dual TrenchMOS™ logic level FET
M3D315
Rev. 02 — 12 August 2003
Product data
1. Description
Dual N-channel enhancement mode field-effect transistors in a plastic surface mount
package using TrenchMOS™ technology.
Product availability:
PHKD6N02LT in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Logic level compatible
s Dual device
s Surface mount package.
3. Applications
s DC-to-DC converters
s Notebook computers
s Portable appliances
s Battery chargers.
4. Pinning information
Table 1:
Pin
1
2
3
4
5, 6
7, 8
Pinning - SOT96-1 (SO8), simplified outline and symbol
Description
Simplified outline
source1 (s1)
gate1 (g1)
8
5
source2 (s2)
gate2 (g2)
drain2 (d2)
drain1 (d1)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d1 d1
d2 d2
s1
g1
s2
g2
MBK725