PHKD13N03LT Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual TrenchMOS™ logic level FET

PHKD13N03LT
M3D315
Dual TrenchMOS™ logic level FET
Rev. 01 — 23 June 2003
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHKD13N03LT in SOT96-1 (SO8).
1.2 Features
s Low gate charge
s Low on-state resistance
s Surface mount package
s Fast switching.
1.3 Applications
s Portable appliances
s Lithium-ion battery chargers
s Notebook computers
s DC-to-DC converters.
1.4 Quick reference data
s V_DS ≤ 30 V
s P_tot ≤ 3.57 W
s I_D ≤ 10.4 A
s R_DSon ≤ 20 mΩ
2. Pinning information
Table 1:
Pin
1
2
3
4
5,6
7,8
Pinning - SOT96-1 (SO8), simplified outline and symbol
Description
Simplified outline
source1 (s1)
gate1 (g1)
8
5
source2 (s2)
gate2 (g2)
drain2 (d2)
drain1 (d1)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d1 d1
d2 d2
s1
g1
s2
g2
MBK725